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APM2305
P-Channel Enhancement Mode MOSFET
Features
*
-16V/-3.5A , RDS(ON)=60m(typ.) @ VGS=-4.5V RDS(ON)=70m(typ.) @ VGS=-2.5V RDS(ON)=83m(typ.) @ VGS=-1.8V
Pin Description
D
3
* * *
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package
1 2
G
S
Top View of SOT-23
S
Applications
*
Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
G
D
Ordering and Marking Information
APM2305
Handling Code Temp. Range Package Code
P-Channel MOSFET
Package Code A : SOT-23 Operation Junction Temp. Range C : -55 to 150C Handling Code TR : Tape & Reel
APM2305 A :
M05X
X - Date Code
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25C unless otherwise noted)
Rating -16 8 -3.5 -12 A V Unit
Maximum Drain Current - Continuous Maximum Drain Current - Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2003 1 www.anpec.com.tw
* Surface Mounted on FR4 Board, t 10 sec.
APM2305
Absolute Maximum Ratings (Cont.)
Symbol PD Parameter Maximum Power Dissipation TA=25C TA=100C TJ TSTG RjA Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient
(TA = 25C unless otherwise noted)
Rating 1.25 0.5 150 -55 to 150 100 W C C C/W Unit
Electrical Characteristics
Symbol Static BV DSS IDSS VGS(th) IGSS R DS(ON) VSDa
b a
(TA = 25C unless otherwise noted)
APM2305 Min. Typ. Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
VGS =0V , IDS=-250A VDS =-6.5V , VGS=0V VDS =VGS , IDS=-250A VGS =8V , VDS=0V VGS =-4.5V , IDS=-3.5A VGS =-2.5V , IDS=-3A VGS =-1.8V , IDS=-2A ISD=-1.25A , VGS=0V VDS =-5V , IDS=-1A VGS =-4.5V
-16 -1 -0.5 -0.7 60 70 83 -0.7 12.7 1.75 2.8 12 21 42 85 32 -1 100 70 85 105 -1.3 15
V A V nA
m V
Dynamic Qg Total Gate Charge Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance
nC
VDD=-10V , IDS=-1A , VGEN =-4.5V , RG =6 VGS =0V VDS =-15V
25 52 18 1290 300 210
ns
pF
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a b
: Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2003
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APM2305
Typical Characteristics
Output Characteristics
12
-VGS=2,3,4,5,6,7,8,9,10V
Transfer Characteristics
12 10
10
-ID-Drain Current (A)
-ID-Drain Current (A)
8 6 4 2
-VGS=1V -VGS=1.5V
8 6 4 2 0 0.0
TJ=125C TJ=25C
TJ=-55C
0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
-VDS - Drain-to-Source Voltage (V)
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
-IDS=250uA
On-Resistance vs. Drain Current
0.10
-VGS(th)-Threshold Voltage (V) (Normalized)
1.00 0.75 0.50 0.25 0.00 -50
RDS(ON)-On-Resistance ()
1.25
0.09 0.08 0.07
-VGS=4.5V -VGS=2.5V
0.06 0.05 0.04
-25
0
25
50
75
100 125 150
0
2
4
6
8
10
12
Tj - Junction Temperature (C)
-ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2003
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APM2305
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.22 0.20
-ID=3.5A
On-Resistance vs. Junction Temperature
2.00
-VGS=4.5V -ID=3.5A
RDS(ON)-On-Resistance ()
0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8
RDS(ON)-On-Resistance () (Normalized)
1.75 1.50 1.25 1.00 0.75 0.50 0.25
0.00 -50
-25
0
25
50
75
100 125 150
-VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (C)
Gate Charge
5
-VDS=5V -ID=1A
Capacitance
2500
Frequency=1MHz
-VGS-Gate-Source Voltage (V)
4
2000
3
Capacitance (pF)
1500
Ciss
2
1000
1
500
Coss Crss
0
0
3
6
9
12
15
0
0
5
10
15
20
QG - Gate Charge (nC)
-VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2003
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APM2305
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
10 12 10 8 6 4 2 0.1 0.0 0 0.01
Single Pulse Power
-IS-Source Current (A)
1
TJ=150C TJ=25C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Power (W)
0.1
1
10
100
500
-VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.
D=0.2 D=0.1
0.1
D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=100C/W 3.TJM-TA=PDMZthJA
SINGLE PULSE
0.01 1E-4
1E-3
0.01
0.1
1
10
100
500
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2003
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APM2305
Packaging Information
SOT-23
D B
3 E 1 2 H
S e
A
A1
L
C
Dim A A1 B C D E e H L
M illim et er s M in. 1. 0 0 0. 0 0 0. 3 5 0. 1 0 2. 7 0 1. 4 0 1. 9 0 B SC 2. 4 0 0. 3 7 3. 0 0 0. 0 94 0. 0 01 5 M ax. 1. 3 0 0. 1 0 0. 5 1 0. 2 5 3. 1 0 1. 8 0 M in. 0. 0 39 0. 0 00 0. 0 14 0. 0 04 0. 1 06 0. 0 55
Inc he s M ax. 0. 0 51 0. 0 04 0. 0 20 0. 0 10 0. 1 22 0. 0 71 0. 0 75 B SC 0. 118
Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2003
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APM2305
Physical Specifications
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Terminal Material Lead Solderability
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) Preheat temperature 125 25C) Temperature maintained above 183C Time within 5C of actual peak temperature Peak temperature range Ramp-down rate Time 25C to peak temperature 3C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0C or 235 +5/-0C 6 C /second max. 6 minutes max. VPR 10 C /second max.
60 seconds 215~ 219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bags Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2003
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APM2305
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1 T2
Ko
J C A B
T1
A 1781 SOT-23 F 3.5 0.05 B 60 1.0 D 1.5 +0.1 C 12.0 D1 F0.1MIN J T1 T2 1.4 Ao 3.1 W 8.0+ 0.3 - 0.3 Bo 3.0 P 4.0 Ko 1.3 E 1.75 t 0.20.03 (mm)
Application
2.5 0.15 9.0 0.5 Po 4.0 P1 2.0 0.05
Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2003
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APM2305
Cover Tape Dimensions
Application SOT- 23 Carrier Width 8 Cover Tape Width 5.3 Devices Per Reel 3000
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.1 - Jan., 2003
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